Oven-Stabilized Ultra Low Noise S-Band DRO for 3.900GHz
Developed for extremely jitter sensitive applications like electron beam accelerators, this voltage-controlled Dielectric-Resonator Oscillator delivers ultimate phase noise performance at 3.900GHz, comparable to quartz crystal oscillators.
With a high performance dielectric resonator at its heart, phase noise typically reaches ‑125dBc/Hz at 1kHz, ‑155dBc/Hz at 10kHz offset and –180dBc/Hz in the noise floor, yielding attosecond jitter performance when integrated from 1kHz to 30MHz.
Double buffering on the output keeps pulling below 1ppm (typically) and a two tier voltage stabilization scheme virtually eliminates pushing.
The tuning port accepts 0..10V for a ±100kHz tuning range and easy integration into phase-locked loops.
The DRO runs off a single +5,7V supply voltage. In addition a +15V supply, drawing a maximum current of 1100mA, is required to keep the unit at a stable temperature of +35°C, ensuring frequency accuracy.
HP: Higher output power level of +17dBm.
ALC: Amplitude stabilization to ±0.1dB with settable output amplitude to ±1dB via 0..+4V control input.